Abatement of GaAs/InP MOCVD process exhaust gases

III/V semiconductors play a vital role in the manufacture of LEDs, Laser diodes, solar cells and transistors for microwave and millimeter wave communication. The production of III/V materials via Metal-Organic Chemical Vapor Deposition (MOCVD) is the by far most dangerous process in the semiconductor industry. Pyrophoric organometallic precursors like trimethylgallium (TMG), trimethylaluminum (TMA) and trimethylindium (TMI) react with highly toxic and flammable arsine (AsH3) and phosphine (PH3) in an atmosphere of hydrogen, producing high levels of white phosphorus as side product. With increasing maturity of this technology topics such as better maintainability, uptime, and process safety become more and more important. One such feature of special relevance for the exhaust gas abatement of MOCVD processes is the introduction of in-situ chlorine chamber clean steps. This talk will give an overview on MOCVD abatement technologies, with a focus on dry-bed chemisorption, also highlighting the implications of the Cl2 clean steps on the abatement technologies.

Why attend?

Attendees will get an overview of GaAs MOCVD abatement technologies, with all their individual risks and hazards, in this way supporting MOCVD operators to perform their own hazard analysis.

Who should attend?

Gallium Arsenide / Indium Phosphide product unit process owners, Facility coordinators and EH&S specialists Focused on.

Principal Scientist, CS CLEAN SOLUTIONS GmbH

Dr. Andreas Feller is Principal Scientist at CS CLEAN SOLUTIONS GmbH. For 20 years now he has been leading the materials development group, successfully bringing to market the proprietary CLEANSORB granulates.

Andreas is a chemical engineer with a PhD in chemistry. His academic career led him to Karlsruhe/Germany, Cape Town/South Africa, Twente/Netherlands, and Munich/Germany.