Application List

Process ApplicationTypical Gases or Liquid Precursors Used
Plasma Etch
Metal EtchCl2, BCl3, HCl, CF4, SF6
Poly Silicon EtchCl2, HBr, Br2, SF6, CF4, NF3, C4F8
Nitride Etch, Oxide EtchCF4, CHF3, C2F6, C3F8, C4F8, CH2F2, NF3,
SF6, O2
Tungsten EtchbackSF6
Ion Implantation
High, Medium, LowAsH3, PH3, BF3, P, As, Sb, Sb(CH3)3, GeH4, GeF4
ALD, LPCVD, PECVD, HDP-CVD
TEOS, undopedTEOS, O2, O3
BPSGTEOS, O3, TMP, TMB, SiH4, PH3, B2H6
Poly-Si (doped)SiH4, (AsH3, PH3)
Silicon GermaniumSiH4, GeH4
OxideSiH4, O2
Nitride, dopedSiH4, NH3, (TMP, TMB, SiH4, PH3, B2H6)
Oxynitride, dopedSiH4, NH3, N2O, (TMP, TMB, SiH4, PH3, B2H6)
Low-k dielectrics1MS, 2MS, 3MS, 4MS, DMDMOS
High-k dielectricsTMA, TEMAH, TDEAH, TAETO, PET
Gate ElectrodesMPA, Ru(Etcp)2, PEMAT
Copper CVDCu(hfac)(TMVS)
Tungsten (Silicide)WF6, SiH4, H2, (DCS)
Barrier LayersTiCl4, NH3, TDMAT, PDMATa, PDEATa,
TAETO, W(CO)6
Plasma Chamber Cleaning
PFC plasmaC2F6, C4F8, NF3
Remote NF3 plasmaF2
Epitaxy
Silicon (doped)DCS, TCS, SiH4, (AsH3, PH3, B2H6)
Silicon-GermaniumSiH4, GeH4, CBr4, 1MS, 2MS, 3MS, HCl
Silicon-Carbide (SiC)SiH4, CH4, C3H8, TMA, HCl
Compound Semiconductors, Optoelectronics, III-V on Si
GaAs, InP MOVPE (MOCVD)TMGa, AsH3, TBA, TMIn, PH3, TBP
GaN MOVPE (MOCVD)TMGa, NH3, UDMH
MBE (MOMBE)As, P, AsH3, PH3
III-V EtchCl2, BCl3, HBr, SiF4, SF6, CH4, GaCl3, InCl3, AsH3, O2
Photovoltaics
Concentrator PhotovoltaicsPH3, AsH3, metalorganics, SiH4, GeH4
CIGSH2S, H2Se
Gas Supply
Emergency Gas Release AbsorbersToxics, Pyrophorics, Corrosives
Gas Cabinet Purging
 
© 2015, CS CLEAN SOLUTIONS ® USA.
CLEANSORB, CS CLEAN SOLUTIONS and the logo are registered trademarks.